聲子表面散射過程可以解釋聲子晶體的超低熱導率。二維矽聲子晶體因其孔的周期性排布能顯著降低熱導率,因而有望應用於熱電領域。來自中國湖南科技大學、湘潭大學的謝國鋒教授以及新加坡高性能計算研究所的張剛教授等,基於納米結構表面的鍵序缺陷,引入聲子散射機制為實驗數據構建了模型。由於表面原子的鍵長變短鍵能變強,所以對晶格振動系統的勢能產生了微擾,並抑制了高頻聲子。同時,低頻聲子被經典邊界散射機制所抑制。作者認為是這兩種機制導致了超低熱導率,並預測可通過讓聲子晶體中的孔壁粗糙化來進一步降低熱導率。該文近期發表於npj Computational Materials 4: 21 (2018); doi:10.1038/s41524-018-0076-9。
Editorial Summary原文
Phononic crystals: Surface scatteringA phonon scattering process on the surface of phononic crystals can explain their ultra-low thermal conductivity. Two-dimensional silicon phononic crystals are promising for thermoelectric applications, as the periodic arrangement of holes allows for significant reduction of their thermal conductivity. A team from Hunan University of Science and Technology and Xiangtan Universities in China, and the Institute of High Performance Computing in Singapore, manage to model the values reported experimentally by incorporating a phonon scattering mechanism, rooted to the bond imperfection on the surface of the nanostructure. As the bonds towards the surface grow shorter and therefore stronger, they perturb the local potential, and suppress the high-frequency phonons. Low-frequency phonons, on the other hand are suppressed by normal boundary scattering. The authors conclude that these two actions lead to the ultra-low thermal conductivity values, and predict that further reduction can be achieved by roughening the hole walls in the phononic crystal.
原文Abstract及其翻譯
Ultra-low thermal conductivity of two-dimensional phononic crystals in the incoherent regime (二維聲子晶體在非相干態下的超低熱導率)
Guofeng Xie, Zhifang Ju, Kuikui Zhou, Xiaolin Wei, Zhixin Guo, Yongqing Cai & Gang Zhang
Abstract Two-dimensional silicon phononic crystals have attracted extensive research interest for thermoelectric applications due to their reproducible low thermal conductivity and sufficiently good electrical properties. For thermoelectric devices in high-temperature environment, the coherent phonon interference is strongly suppressed; therefore phonon transport in the incoherent regime is critically important for manipulating their thermal conductivity. On the basis of perturbation theory, we present herein a novel phonon scattering process from the perspective of bond order imperfections in the surface skin of nanostructures. We incorporate this strongly frequency-dependent scattering rate into the phonon Boltzmann transport equation and reproduce the ultra low thermal conductivity of holey silicon nanostructures. We reveal that the remarkable reduction of thermal conductivity originates not only from the impediment of low-frequency phonons by normal boundary scattering, but also from the severe suppression of high-frequency phonons by surface bond order imperfections scattering. Our theory not only reveals the role of the holey surface on the phonon transport, but also provide a computation tool for thermal conductivity modification in nanostructures through surface engineering.
摘要 二維矽聲子晶體因其可重複的低熱導率和優良電性能,在熱電應用領域引起了廣泛的研究興趣。工作在高溫環境下的熱電器件,相干聲子的幹涉效應受到強烈抑制,因此非相干的聲子輸運機制對於調控熱導率是非常重要的。本研究在微擾理論的基礎上,從納米結構表面鍵序缺陷的角度出發,提出了一種新的聲子散射過程。將這種頻率強依賴性散射率納入聲子玻爾茲曼輸運方程,理論計算重現了多孔矽納米結構的超低熱導率實驗值。我們發現,熱導率的顯著降低,不僅源於經典邊界散射對低頻聲子的阻礙,還源於表面鍵序缺陷散射對高頻聲子的嚴重抑制。我們的理論不僅揭示了多孔表面對聲子輸運的作用機制,還為表面工程調控納米結構的熱導率提供了計算工具。
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