[1] JOHN V. Introduction to surface and thin film processes[M]. Cambridge: Cambridge University Press, 2000.
[2] ALBERTO P, VILLAIN J. Physics of crystal growth[M]. Cambridge: Cambridge University Press, 1998.
[3] OHRING M. Materials Science of Thin Films (2nd ed.)[M]. Boston: Academic Press, 2001.
[4] MARTIN L W, CHU Y H, RAMESH R. Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films[J]. Materials Science and Engineering R, 2010, 68: 89.
[5] BRUNNER K. Si/Ge nanostructures[J]. Reports on Progress in Physics, 2002, 65: 27.
[6] STANGL J, HOLY V, BAUER G. Structural properties of self-organized semiconductor nanostructures[J]. Reviews of Modern Physics, 2004, 76: 725.
[7] CHEN L Q. Phase-field models for microstructure evolution[J]. Annual Review of Materials Research, 2002, 32: 113.
[8] STEINBACH I. Phase-field models in materials science[J]. Modelling and Simulation in Materials Science and Engineering, 2009, 17: 073001.
[9] SINGER-LOGINOVA I, SINGER H M. The phase field technique for modeling multiphase materials[J]. Reports on Progress in Physics, 2008, 71: 106501.
[10] WANG Y, LI J. Phase field modeling of defects and deformation[J]. Acta Materialia 2010, 58: 1212.
[11] CHEN L Q. Phase-field method of phase transitions/domain structures in ferroelectric thin films: A review[J]. Journal of the American Ceramic Society, 2008, 91(6): 1835.
[12] 陳龍慶. 相場模擬與材料基因組計劃[J]. 科學通報, 2013, 58:3638-3641.
CHEN L Q. Phase-field method and materials genome initiative(MGI)[J].Chin Sci Bull. 2013, 58: 3638-3641. (in Chinese)
[13] 方鵬均，劉芯宇，張雷，等. 邊界熱通量作用下枝晶生長相場模型的有限元法模擬[J]．功能材料，2014, 45(18): 18042-18046．
FANG P, LIU X, ZHANG L, et al．Phase field simulation of dendritic growth with boundary heat flux by finite element method[J]．Journal of Functional Materials，2014, 45(18): 18042-18046．(in Chinese)
[14] 王智平，王寶成，肖榮振, 等. Si-Ni合金中小晶面枝晶生長的相場法模擬[J]．功能材料，2014, 45(18): 18042-18046．
WANG Z, WANG B, XIAO R, et al．Phase-field method simulation of faceted dendrite growth in Si-Ni alloy[J]．Journal of Functional Materials，2014, 45(18): 18042-18046. (in Chinese)
[15] 王棟, 王雲志, 李巨. 鐵性智能材料的計算機模擬進展[J]. 中國材料進展, 2012, 31(3): 8-14.
WANG D, WANG Y, LI J. Progress in Computer Simulations of Ferroic Smart Materials[J]. Materials China, 2012, 31(3): 8-14. (in Chinese)
[16] 王傑, 李欣凱, 劉暢, 等. 材料微結構演化的相場模擬[J]. 固體力學學報, 2016, 37(1): 1-33.
WANG J, LI X, LIU C, et al. Phase Field Simulations of Microstructure Evolution[J]. Chinese Journal of Solid Mechanics, 2016, 37(1): 1-33. (in Chinese)
[17] 王冠，翁燕華，吳平平. 相場法模擬GaAs襯底上InGaAs異質結表面形貌[J]. 材料導報2018,32(z1):547-552.
WANG G, WENG Y, WU P. Phase field simulation on the morphology of InGaAs heterostructure on GaAs substrate[J]. Materials Review, 2018, 32(z1): 547-552. (in Chinese)
[18] PROVATAS N, ELDER K. Phase-field methods in materials science and engineering[M]. Wiley-VCH Verlag GmbH & Co, 2010.
[19] BINER S B. Programming phase-field modeling[M]. Springer International Publishing, 2017.
[20] 徐慢, 夏冬林, 楊晟, 等．薄膜太陽能電池[J]．材料導報, 2006, 20(9): 109-111．
XU M, XIA D, YANG S, et al．Thin film solar cells[J]．Materials Review，2006, 20(9): 109-111．(in Chinese)
[21] 羅子江，周勳，楊再榮, 等．InGaAs/GaAs異質薄膜MBE生長研究[J]．功能材料, 2011, 42(5): 846-849.
LUO Z, ZHOU X, YANG Z, et al. The MBE growth research on InGaAs/GaAs heterofilms[J]. Journal of Functional Materials, 2011, 42(5): 846-849. (in Chinese)
[22] ARTHUR J R. Molecular beam epitaxy[J]. Surface Science, 2002, 500:189.
[23] PATRICK MCCRAY W. MBE deserves a place in the history books[J]. Nature Nanotechnology, 2007, 2: 259.
[24] BAUER E. Phanomenologische theorie der Kristallabscheidung an oberflachen. I[J]. Zeitschrift fur Kristallographie, 1958, 110: 372.
[25] STRANSKI I N, KRASTANOW L. Zur Theorie der orientierten Ausscheidung von Ionenkristallen aufeinander[J]. Abhandlungen der Mathematisch-Naturwissenschaftlichen Klasse IIb. Akademie der Wissenschaften Wien. 1938, 146: 797.
[26] MATTHEWS J W, BLAKESLEE A E. Defects in epitaxial multilayers-I: Misfit Dislocations[J]. Journal of Crystal Growth. 1974, 27: 118.
[27] PEOPLE R, BEAN J C. Calculation of crytical layer thickness versus lattice mismatch for GexSi1-x/Si Strained-Layer heterostructures[J]. Applied Physics Letters, 1985, 47: 322.
[28] SPECK S, POMPE W. Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory[J]. Journal of Applied Physics,1994, 76: 466.
[29] MAREE P M J, BARBOUR J C, VAN DER VEEN J F, et al. Generation of misfit dislocations in semiconductors[J]. Journal of Applied Physics,1987, 62: 4413.
[30] SHENG G, HU J M, ZHANG J X, et al. Phase-field simulations of thickness-dependent domain stability in PbTiO3 thin films[J]. Acta Materialia, 2012, 60: 3296.
[31] SCHLOM D G, CHEN L Q, PAN X Q, et al. A thin film approach to engineering functionality into oxides[J]. Journal of the American Ceramic Society, 2008, 91(8): 2429.
[32] BEAN J C, FELDMAN L C, FIORY A T, et al. GexSi1-x/Si strained‐layer superlattice grown by molecular beam epitaxy[J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1984, 2: 436.
[33] HOUGHTON D C, GIBBINGS C J, TUPPEN C G, et al. Equilibrium critical thickness for Si1-xGex strained layers on (100) Si[J]. Applied Physics Letters, 1990, 56, 460.
[34] ELMAN B, KOTELES E S, MALMAN P, ET AL. In situ measurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates[J]. Applied Physics Letters, 1989, 55, 1659.
[35] AYERS J E. Heteroepitaxy of semiconductors: Theory, Growth, and Characterization[M]. CRC Press, 2017.
[36] ASARO R J, et al. Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion[J]. Metallurgical Transactions, 1972, 3: 1789.
[37] GRINFELD M A. Instability of the equilibrium of a nonhydrostatically stressed body and a melt Soviet physics[J]. Doklady, 1986, 31: 831.
[38] VENABLES J A, SPILLER G D T, HANBUCKEN M. Nucleation and growth of thin films[J]. Reports on Progress in Physics, 1984, 47(4): 399.
[39] SROLOVITZ D J. On the stability of surfaces of stressed solids[J]. Acta Metallurgica, 1989, 37: 621.
[40] GAO H J. Some general properties of stress-driven surface evolution in a heteroepitaxial thin film structure[J]. Journal of the Mechanics and Physics of Solids, 1994, 42: 741.
[41] BALIBAR S, ALLES H, PARSHIN A Y. The surface of helium crystals[J]. Reviews of Modern Physics, 2005, 77, 317.
[42] JESSON D E, CHEN K M, PENNYCOOK S J, et al. Mechanism of strain induced roughening and dislocation multiplication in SixGe1-x thin films[J]. Journal of Electronic Materials, 1997, 26: 1039.
[43] BERREHAR J, CAROLI C, LAPERSONNE-MEYER C, et al. Surface patterns on single-crystal films under uniaxial stress: Experimental evidence for Grined instability[J]. Physical Review B, 1992, 46: 13487.
[44] KUZNETSOV P V, PANIN V E, PETRAKOVA I V. Grinfeld instability in the formation of a tweed structure at the Al crystal surface under cyclic tension[J]. Physical Mesomechanics, 2010, 13: 70.
[45] GURURAJAN M P, LAHIRI A. Elastic stress effects on microstructural instabilities[J]. Journal of the Indian Institute of Science, 2016, 96(3): 199.
[46] KHACHATURYAN A G. Theory of Structural Transfomations in Solid[M]. New York: Wiley, 1983.
[47] TAKAKI T, HIROUCHI T, TOMITA Y. Phase-field study of interface energy effect on quantum dot morphology[J]. Journal of Crystal Growth, 2008, 310: 2248.
[48] CHEN L Q, SHEN J. Applications of semi-implicit Fourier-spectral method to phase field equations[J]. Computer Physics Communications, 1998, 108: 147.
[49] CHUANG S L. Physics of optoelectronics devices[M]. New York: Wiley, 1995.
[50] MARIAGER S O, LAURIDSEN S L, DOHN A, et al. High-resolution three-dimensional reciprocal-space mapping of InAs nanowires[J]. Journal of Applied Crystallography, 2009, 42: 369.
[51] YU Y M, LIU B G. Phase-field model of island growth in epitaxy[J]. Physical Review E, 2004, 69: 021601.
[52] RATZ A, RIBALTA A, VOIGT A. Surface evolution of elastically stressed films under deposition by a diffuse interface model[J]. Journal of Computational Physics, 2006, 214: 187.
[53] ARJMAND M, DENG J, SWAMINATHAN N, et al. Effects of confinements on morphology of InxGa1-xAs thin film grown on sub-micron patterned GaAs substrate: Elastoplastic phase field model[J]. Journal of Applied Physics, 2014, 116: 114313.
[54] PODMANICZKY F, TóTH G I, TEGZE G, et al. Phase-field crystal modeling of heteroepitaxy and exotic modes of crystal nucleation[J]. Journal of Crystal Growth, 2017, 457: 24.
[55] WANG Y U, JIN Y M, KHACHATURYAN A G. Phase field microelasticity modeling of surface instability of heteroepitaxial thin films[J]. Acta Materialia, 2004, 52: 81.
[56] SEOL D J, HU S Y, LIU Z K, et al. Phase-field modeling of stress-induced surface instabilities in heteroepitaxial thin films[J]. Journal of Applied Physics, 2005, 98: 044910.
[57] YU P, HU S Y, CHEN L Q, et al. An iterative-perturbation scheme for treating inhomogeneous elasticity in phase-field models[J]. Journal of Computational Physics, 2005, 208: 34.
[58] NI Y, HE L H, SOH A K. Three-dimensional phase field simulation for surface roughening of heteroepitaxi-al films with elastic anisotropy[J]. Journal of Crystal Growth. 2005, 284: 281.
[59] LIANG X D, NI Y, HE L H. Shape-dependent composition profile in epitaxial alloy quantum dots: A phase-field simulation[J]. Computational Materials Science, 2010, 48: 871
[60] 大澤裕樹, 山中晃徳, Willy Kurnia, など. 超微細塑性加工と自己組織化による規則配列した金ナノドットアレイの創製[J]. 日本機械學會論文集(C編)，原著論文No.2010-JCR-0328
OSAWA H, YAMANAKA A, KURNIA W, et al. Fabrication of ordered gold nano dot array by nano plastic forming and self-assembly[J]. Transactions of the JSME (in Japanese), No.2010-JCR-0328
[61] ELDER K R, PROVATAS N, BERRY J, et al. Phase-field crystal modeling and classical density functional theory of freezing[J]. Physical Review B, 2007, 75: 064107.
[62] BOYNE A, DREGIA S A, WANG Y. Concurrent spinodal decomposition and surface roughening in thin solid films[J]. Applied Physics Letters, 2011, 99: 063111.
[63] BOYNE A, RAUSCHER M D, DREGIA S A, et al. Surface island formation with localized stresses[J]. Scripta Materialia, 2011, 64: 705.
[64] WANG L Y, LIU Z L, ZHUANG Z. Continuum modeling of surface roughening in heteroepitaxial structures based on phase field theory[J]. Computational Materials Science, 2017, 136: 109.
[65] WANG Y U, JIN Y M, KHACHATURYAN A G. Phase field microelasticity modeling of dislocation dynamics near free surface and in heteroepitaxial thin films[J]. Acta Materialia, 2003, 51: 4209.
[66] WANG Y U, JIN Y M, KHACHATURYAN A G. Mesoscale modelling of mobile crystal defects-dislocations, cracks and surface roughening: Phase field microelasticity approach[J]. Philosophical Magazine, 2005, 85: 261.
[67] WANG L Y, LIU Z L, ZHUANG Z. Developing micro-scale crystal plasticity model based on phase field theory for modeling dislocations in heteroepitaxial structures[J]. International Journal of Plasticity, 2016, 81: 267.
[68] HU S Y, CHEN L Q. Spinodal decomposition in a film with periodically distributed interfacial dislocations[J]. Acta Materialia, 2004, 52: 3069.
[69] YU P, HU S Y, CHEN L Q, et al. An iterative-perturbation scheme for treating inhomogeneous elasticity in phase-field models[J]. Journal of Computational Physics, 2005, 208: 34.
[70] HAATAJA M, MULLER J, RUTENBERG A D, et al. Dynamics of dislocations and surface instabilities in misfitting heteroepitaxial films[J]. Physical Review B, 2002: 035401.
[71] WU P P, GAO F L, ZHANG S G, et al. Surface morphology of GaAs/In0.3Ga0.7As in an elastic field of static point defects[J]. Chinese Physics Letters, 2014, 31(2): 026802.
[72] CHIRRANJEEVI B G, ABINANDANAN T A, GURURAJAN M P. A phase field study of morphological instabilities in multilayer thin films[J]. Acta Materialia, 2009, 57: 1060.
[73] ZAEEM M A, SINISA D J. Mesarovic morphological instabilities in thin films: Evolution maps[J]. Computational Materials Science, 2011, 50: 1030.
[74] WU P P, GAO F L, LI G Q. Effects of buffer layer thickness on the surface roughness of In0.3Ga0.7As thin films: A phase-field simulation[J]. Journal of Materials Research, 2013, 28(23).
[75] WU P P, WANG G. A phase-field model for multilayered heterostructure morphology[J]. Materials Science Forum. 2019, 944: 788-794.
[76] μ-pro package on Chen’s research group[EB/OL]. https://www.ems. psu.edu/～chen /index.html.[1] JOHN V. Introduction to surface and thin film processes[M]. Cambridge: Cambridge University Press, 2000.
[2] ALBERTO P, VILLAIN J. Physics of crystal growth[M]. Cambridge: Cambridge University Press, 1998.
[3] OHRING M. Materials Science of Thin Films (2nd ed.)[M]. Boston: Academic Press, 2001.
[4] MARTIN L W, CHU Y H, RAMESH R. Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films[J]. Materials Science and Engineering R, 2010, 68: 89.
[5] BRUNNER K. Si/Ge nanostructures[J]. Reports on Progress in Physics, 2002, 65: 27.
[6] STANGL J, HOLY V, BAUER G. Structural properties of self-organized semiconductor nanostructures[J]. Reviews of Modern Physics, 2004, 76: 725.
[7] CHEN L Q. Phase-field models for microstructure evolution[J]. Annual Review of Materials Research, 2002, 32: 113.
[8] STEINBACH I. Phase-field models in materials science[J]. Modelling and Simulation in Materials Science and Engineering, 2009, 17: 073001.
[9] SINGER-LOGINOVA I, SINGER H M. The phase field technique for modeling multiphase materials[J]. Reports on Progress in Physics, 2008, 71: 106501.
[10] WANG Y, LI J. Phase field modeling of defects and deformation[J]. Acta Materialia 2010, 58: 1212.
[11] CHEN L Q. Phase-field method of phase transitions/domain structures in ferroelectric thin films: A review[J]. Journal of the American Ceramic Society, 2008, 91(6): 1835.
[12] 陳龍慶. 相場模擬與材料基因組計劃[J]. 科學通報, 2013, 58:3638-3641.
CHEN L Q. Phase-field method and materials genome initiative(MGI)[J].Chin Sci Bull. 2013, 58: 3638-3641. (in Chinese)
[13] 方鵬均，劉芯宇，張雷，等. 邊界熱通量作用下枝晶生長相場模型的有限元法模擬[J]．功能材料，2014, 45(18): 18042-18046．
FANG P, LIU X, ZHANG L, et al．Phase field simulation of dendritic growth with boundary heat flux by finite element method[J]．Journal of Functional Materials，2014, 45(18): 18042-18046．(in Chinese)
[14] 王智平，王寶成，肖榮振, 等. Si-Ni合金中小晶面枝晶生長的相場法模擬[J]．功能材料，2014, 45(18): 18042-18046．
WANG Z, WANG B, XIAO R, et al．Phase-field method simulation of faceted dendrite growth in Si-Ni alloy[J]．Journal of Functional Materials，2014, 45(18): 18042-18046. (in Chinese)
[15] 王棟, 王雲志, 李巨. 鐵性智能材料的計算機模擬進展[J]. 中國材料進展, 2012, 31(3): 8-14.
WANG D, WANG Y, LI J. Progress in Computer Simulations of Ferroic Smart Materials[J]. Materials China, 2012, 31(3): 8-14. (in Chinese)
[16] 王傑, 李欣凱, 劉暢, 等. 材料微結構演化的相場模擬[J]. 固體力學學報, 2016, 37(1): 1-33.
WANG J, LI X, LIU C, et al. Phase Field Simulations of Microstructure Evolution[J]. Chinese Journal of Solid Mechanics, 2016, 37(1): 1-33. (in Chinese)
[17] 王冠，翁燕華，吳平平. 相場法模擬GaAs襯底上InGaAs異質結表面形貌[J]. 材料導報2018,32(z1):547-552.
WANG G, WENG Y, WU P. Phase field simulation on the morphology of InGaAs heterostructure on GaAs substrate[J]. Materials Review, 2018, 32(z1): 547-552. (in Chinese)
[18] PROVATAS N, ELDER K. Phase-field methods in materials science and engineering[M]. Wiley-VCH Verlag GmbH & Co, 2010.
[19] BINER S B. Programming phase-field modeling[M]. Springer International Publishing, 2017.
[20] 徐慢, 夏冬林, 楊晟, 等．薄膜太陽能電池[J]．材料導報, 2006, 20(9): 109-111．
XU M, XIA D, YANG S, et al．Thin film solar cells[J]．Materials Review，2006, 20(9): 109-111．(in Chinese)
[21] 羅子江，周勳，楊再榮, 等．InGaAs/GaAs異質薄膜MBE生長研究[J]．功能材料, 2011, 42(5): 846-849.
LUO Z, ZHOU X, YANG Z, et al. The MBE growth research on InGaAs/GaAs heterofilms[J]. Journal of Functional Materials, 2011, 42(5): 846-849. (in Chinese)
[22] ARTHUR J R. Molecular beam epitaxy[J]. Surface Science, 2002, 500:189.
[23] PATRICK MCCRAY W. MBE deserves a place in the history books[J]. Nature Nanotechnology, 2007, 2: 259.
[24] BAUER E. Phanomenologische theorie der Kristallabscheidung an oberflachen. I[J]. Zeitschrift fur Kristallographie, 1958, 110: 372.
[25] STRANSKI I N, KRASTANOW L. Zur Theorie der orientierten Ausscheidung von Ionenkristallen aufeinander[J]. Abhandlungen der Mathematisch-Naturwissenschaftlichen Klasse IIb. Akademie der Wissenschaften Wien. 1938, 146: 797.
[26] MATTHEWS J W, BLAKESLEE A E. Defects in epitaxial multilayers-I: Misfit Dislocations[J]. Journal of Crystal Growth. 1974, 27: 118.
[27] PEOPLE R, BEAN J C. Calculation of crytical layer thickness versus lattice mismatch for GexSi1-x/Si Strained-Layer heterostructures[J]. Applied Physics Letters, 1985, 47: 322.
[28] SPECK S, POMPE W. Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory[J]. Journal of Applied Physics,1994, 76: 466.
[29] MAREE P M J, BARBOUR J C, VAN DER VEEN J F, et al. Generation of misfit dislocations in semiconductors[J]. Journal of Applied Physics,1987, 62: 4413.
[30] SHENG G, HU J M, ZHANG J X, et al. Phase-field simulations of thickness-dependent domain stability in PbTiO3 thin films[J]. Acta Materialia, 2012, 60: 3296.
[31] SCHLOM D G, CHEN L Q, PAN X Q, et al. A thin film approach to engineering functionality into oxides[J]. Journal of the American Ceramic Society, 2008, 91(8): 2429.
[32] BEAN J C, FELDMAN L C, FIORY A T, et al. GexSi1-x/Si strained‐layer superlattice grown by molecular beam epitaxy[J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1984, 2: 436.
[33] HOUGHTON D C, GIBBINGS C J, TUPPEN C G, et al. Equilibrium critical thickness for Si1-xGex strained layers on (100) Si[J]. Applied Physics Letters, 1990, 56, 460.
[34] ELMAN B, KOTELES E S, MALMAN P, ET AL. In situ measurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates[J]. Applied Physics Letters, 1989, 55, 1659.
[35] AYERS J E. Heteroepitaxy of semiconductors: Theory, Growth, and Characterization[M]. CRC Press, 2017.
[36] ASARO R J, et al. Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion[J]. Metallurgical Transactions, 1972, 3: 1789.
[37] GRINFELD M A. Instability of the equilibrium of a nonhydrostatically stressed body and a melt Soviet physics[J]. Doklady, 1986, 31: 831.
[38] VENABLES J A, SPILLER G D T, HANBUCKEN M. Nucleation and growth of thin films[J]. Reports on Progress in Physics, 1984, 47(4): 399.
[39] SROLOVITZ D J. On the stability of surfaces of stressed solids[J]. Acta Metallurgica, 1989, 37: 621.
[40] GAO H J. Some general properties of stress-driven surface evolution in a heteroepitaxial thin film structure[J]. Journal of the Mechanics and Physics of Solids, 1994, 42: 741.
[41] BALIBAR S, ALLES H, PARSHIN A Y. The surface of helium crystals[J]. Reviews of Modern Physics, 2005, 77, 317.
[42] JESSON D E, CHEN K M, PENNYCOOK S J, et al. Mechanism of strain induced roughening and dislocation multiplication in SixGe1-x thin films[J]. Journal of Electronic Materials, 1997, 26: 1039.
[43] BERREHAR J, CAROLI C, LAPERSONNE-MEYER C, et al. Surface patterns on single-crystal films under uniaxial stress: Experimental evidence for Grined instability[J]. Physical Review B, 1992, 46: 13487.
[44] KUZNETSOV P V, PANIN V E, PETRAKOVA I V. Grinfeld instability in the formation of a tweed structure at the Al crystal surface under cyclic tension[J]. Physical Mesomechanics, 2010, 13: 70.
[45] GURURAJAN M P, LAHIRI A. Elastic stress effects on microstructural instabilities[J]. Journal of the Indian Institute of Science, 2016, 96(3): 199.
[46] KHACHATURYAN A G. Theory of Structural Transfomations in Solid[M]. New York: Wiley, 1983.
[47] TAKAKI T, HIROUCHI T, TOMITA Y. Phase-field study of interface energy effect on quantum dot morphology[J]. Journal of Crystal Growth, 2008, 310: 2248.
[48] CHEN L Q, SHEN J. Applications of semi-implicit Fourier-spectral method to phase field equations[J]. Computer Physics Communications, 1998, 108: 147.
[49] CHUANG S L. Physics of optoelectronics devices[M]. New York: Wiley, 1995.
[50] MARIAGER S O, LAURIDSEN S L, DOHN A, et al. High-resolution three-dimensional reciprocal-space mapping of InAs nanowires[J]. Journal of Applied Crystallography, 2009, 42: 369.
[51] YU Y M, LIU B G. Phase-field model of island growth in epitaxy[J]. Physical Review E, 2004, 69: 021601.
[52] RATZ A, RIBALTA A, VOIGT A. Surface evolution of elastically stressed films under deposition by a diffuse interface model[J]. Journal of Computational Physics, 2006, 214: 187.
[53] ARJMAND M, DENG J, SWAMINATHAN N, et al. Effects of confinements on morphology of InxGa1-xAs thin film grown on sub-micron patterned GaAs substrate: Elastoplastic phase field model[J]. Journal of Applied Physics, 2014, 116: 114313.
[54] PODMANICZKY F, TóTH G I, TEGZE G, et al. Phase-field crystal modeling of heteroepitaxy and exotic modes of crystal nucleation[J]. Journal of Crystal Growth, 2017, 457: 24.
[55] WANG Y U, JIN Y M, KHACHATURYAN A G. Phase field microelasticity modeling of surface instability of heteroepitaxial thin films[J]. Acta Materialia, 2004, 52: 81.
[56] SEOL D J, HU S Y, LIU Z K, et al. Phase-field modeling of stress-induced surface instabilities in heteroepitaxial thin films[J]. Journal of Applied Physics, 2005, 98: 044910.
[57] YU P, HU S Y, CHEN L Q, et al. An iterative-perturbation scheme for treating inhomogeneous elasticity in phase-field models[J]. Journal of Computational Physics, 2005, 208: 34.
[58] NI Y, HE L H, SOH A K. Three-dimensional phase field simulation for surface roughening of heteroepitaxi-al films with elastic anisotropy[J]. Journal of Crystal Growth. 2005, 284: 281.
[59] LIANG X D, NI Y, HE L H. Shape-dependent composition profile in epitaxial alloy quantum dots: A phase-field simulation[J]. Computational Materials Science, 2010, 48: 871
[60] 大澤裕樹, 山中晃徳, Willy Kurnia, など. 超微細塑性加工と自己組織化による規則配列した金ナノドットアレイの創製[J]. 日本機械學會論文集(C編)，原著論文No.2010-JCR-0328
OSAWA H, YAMANAKA A, KURNIA W, et al. Fabrication of ordered gold nano dot array by nano plastic forming and self-assembly[J]. Transactions of the JSME (in Japanese), No.2010-JCR-0328
[61] ELDER K R, PROVATAS N, BERRY J, et al. Phase-field crystal modeling and classical density functional theory of freezing[J]. Physical Review B, 2007, 75: 064107.
[62] BOYNE A, DREGIA S A, WANG Y. Concurrent spinodal decomposition and surface roughening in thin solid films[J]. Applied Physics Letters, 2011, 99: 063111.
[63] BOYNE A, RAUSCHER M D, DREGIA S A, et al. Surface island formation with localized stresses[J]. Scripta Materialia, 2011, 64: 705.
[64] WANG L Y, LIU Z L, ZHUANG Z. Continuum modeling of surface roughening in heteroepitaxial structures based on phase field theory[J]. Computational Materials Science, 2017, 136: 109.
[65] WANG Y U, JIN Y M, KHACHATURYAN A G. Phase field microelasticity modeling of dislocation dynamics near free surface and in heteroepitaxial thin films[J]. Acta Materialia, 2003, 51: 4209.
[66] WANG Y U, JIN Y M, KHACHATURYAN A G. Mesoscale modelling of mobile crystal defects-dislocations, cracks and surface roughening: Phase field microelasticity approach[J]. Philosophical Magazine, 2005, 85: 261.
[67] WANG L Y, LIU Z L, ZHUANG Z. Developing micro-scale crystal plasticity model based on phase field theory for modeling dislocations in heteroepitaxial structures[J]. International Journal of Plasticity, 2016, 81: 267.
[68] HU S Y, CHEN L Q. Spinodal decomposition in a film with periodically distributed interfacial dislocations[J]. Acta Materialia, 2004, 52: 3069.
[69] YU P, HU S Y, CHEN L Q, et al. An iterative-perturbation scheme for treating inhomogeneous elasticity in phase-field models[J]. Journal of Computational Physics, 2005, 208: 34.
[70] HAATAJA M, MULLER J, RUTENBERG A D, et al. Dynamics of dislocations and surface instabilities in misfitting heteroepitaxial films[J]. Physical Review B, 2002: 035401.
[71] WU P P, GAO F L, ZHANG S G, et al. Surface morphology of GaAs/In0.3Ga0.7As in an elastic field of static point defects[J]. Chinese Physics Letters, 2014, 31(2): 026802.
[72] CHIRRANJEEVI B G, ABINANDANAN T A, GURURAJAN M P. A phase field study of morphological instabilities in multilayer thin films[J]. Acta Materialia, 2009, 57: 1060.
[73] ZAEEM M A, SINISA D J. Mesarovic morphological instabilities in thin films: Evolution maps[J]. Computational Materials Science, 2011, 50: 1030.
[74] WU P P, GAO F L, LI G Q. Effects of buffer layer thickness on the surface roughness of In0.3Ga0.7As thin films: A phase-field simulation[J]. Journal of Materials Research, 2013, 28(23).
[75] WU P P, WANG G. A phase-field model for multilayered heterostructure morphology[J]. Materials Science Forum. 2019, 944: 788-794.
[76] μ-pro package on Chen’s research group[EB/OL]. https://www.ems. psu.edu/～chen /index.html.